Suppression of geometric component of charge pumping current in thin film silicon on insulator metal-oxide-semiconductor field-effect transistors

A new reverse pulse method is proposed for precise measurement of charge pumping current in silicon on insulator metaloxide-semiconductor field-effect transistors (SOI MOSFETs), where the reverse pulse voltage is applied to the body only at the gate voltage rise time. The majority carries of the high resistive body region can be completely removed by applying the reverse pulse to the body. Therefore, the undesirable, geometry-dependent component which causes imprecise measurement of the interface trap density on SOI MOSFETs is suppressed. This method also suppresses the reduction of effective channel length which takes place when using a DC reverse bias. It is demonstrated that the accurate measurements of the interface density on SOI MOSFETs are possible.