Suppression of indefinite peaks in InAs/GaAs quantum dot spectrum by low temperature capping in the indium-flush method

N. Kumagai, S. Ohkouchi, S. Nakagawa, M. Nomura, Y. Ota, M. Shirane, Y. Igarashi, S. Yorozu, S. Iwamoto, Y. Arakawa

研究成果: Article査読

11 被引用数 (Scopus)

抄録

We have investigated effects of growth temperature of thin GaAs capping layer in the initial stage of indium-flush process using atomic force microscopy and microscopic photoluminescence (μ-PL) methods. The shape of capped InAs quantum dot (QD) and its μ-PL properties are sensitive to the growth temperature of thin GaAs capping layer. In the case of the high temperature cap, the QD shape in initial capping stage is elongated along the [1 1 -0] direction, and μ-PL spectrum shows several peaks accompanied with indefinite peaks. On the other hand, the low temperature case, the QD shape is kept in isotropic and μ-PL spectrum shows distinctive emissions from excitonic states of the QD with suppressed indefinite peaks. These results indicate that the low temperature capping is effective to keep an isotropic shape of QD and suppress indefinite peaks.

本文言語English
ページ(範囲)2753-2756
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
42
10
DOI
出版ステータスPublished - 2010 9月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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