抄録
We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.
本文言語 | English |
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論文番号 | 132101 |
ジャーナル | Applied Physics Letters |
巻 | 107 |
号 | 13 |
DOI | |
出版ステータス | Published - 2015 9月 28 |
ASJC Scopus subject areas
- 物理学および天文学(その他)