TY - GEN
T1 - Switching characteristics in the ferroelectric organic molecular memories
AU - Uemura, H.
AU - Horie, S.
AU - Noda, K.
AU - Kuwajima, S.
AU - Ishida, K.
AU - Horiuchi, T.
AU - Matsushige, K.
PY - 2006
Y1 - 2006
N2 - Organic molecular memories are expected to become one of the essential key devices in the next-generation flexible digital instruments, and in this paper a novel non-volatile organic memory will be introduced. It is shown that the polarization switching characteristics in the ferroelectric films of vinylidene fluoride (VDF) oligomer and P(VDF/TrFE) copolymer change with their structural factors such as crystallinity and chain length of the materials, and the switching time becomes shorter and shorter with increasing applied electric field and reaches in the order of nano-second. Moreover, the possibilities of the application of such thin organic ferroelectric films to an infrared image sensor as well as the creation of the ultra high-density molecular memory by utilizing recent scanning probe microscopy (SPM) technique will be discussed.
AB - Organic molecular memories are expected to become one of the essential key devices in the next-generation flexible digital instruments, and in this paper a novel non-volatile organic memory will be introduced. It is shown that the polarization switching characteristics in the ferroelectric films of vinylidene fluoride (VDF) oligomer and P(VDF/TrFE) copolymer change with their structural factors such as crystallinity and chain length of the materials, and the switching time becomes shorter and shorter with increasing applied electric field and reaches in the order of nano-second. Moreover, the possibilities of the application of such thin organic ferroelectric films to an infrared image sensor as well as the creation of the ultra high-density molecular memory by utilizing recent scanning probe microscopy (SPM) technique will be discussed.
KW - Molecular memory
KW - Organic ferroelectric film
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U2 - 10.1109/NMDC.2006.4388722
DO - 10.1109/NMDC.2006.4388722
M3 - Conference contribution
AN - SCOPUS:50249127152
SN - 1424405408
SN - 9781424405404
T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
SP - 148
EP - 149
BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Y2 - 22 October 2006 through 25 October 2006
ER -