TY - JOUR
T1 - Synthesis process of BaMgAl10O17:Eu2+ from sol-gel-derived Eu2+-activated fluoride precursors without H 2 annealing treatments
AU - Fujihara, Shinobu
AU - Kishiki, Yoko
AU - Kimura, Toshio
PY - 2004/11/26
Y1 - 2004/11/26
N2 - Barium magnesium aluminate, BaMgAl10O17, was synthesized by a solid-state reaction between Al2O3 and sol-gel-derived BaMgF4 precursors. The reaction temperature necessary for producing a single-phase material was reduced to 1300°C because of the higher reactivity and lower melting point of the fluoride precursors. Eu-doped BaMgF4 was also prepared and characterized to examine its suitability as a precursor for synthesizing BaMgAl10O17:Eu 2+ blue phosphors. It was demonstrated that Eu3+, which was used in the acetate form as a starting material, was reduced to Eu 2+ in the sol-gel processing of BaMgF4, as indicated by a broad blue emission due to an allowed d-f transition at 420 nm with an ultraviolet excitation at 290 nm. BaMgAl10O17:Eu 2+, which showed efficient blue emissions at 450 nm with an ultraviolet excitation at 254 nm, was successfully prepared by heating a mixture of Al2O3 and Eu-doped BaMgF4 at 1300°C without any special reducing treatment.
AB - Barium magnesium aluminate, BaMgAl10O17, was synthesized by a solid-state reaction between Al2O3 and sol-gel-derived BaMgF4 precursors. The reaction temperature necessary for producing a single-phase material was reduced to 1300°C because of the higher reactivity and lower melting point of the fluoride precursors. Eu-doped BaMgF4 was also prepared and characterized to examine its suitability as a precursor for synthesizing BaMgAl10O17:Eu 2+ blue phosphors. It was demonstrated that Eu3+, which was used in the acetate form as a starting material, was reduced to Eu 2+ in the sol-gel processing of BaMgF4, as indicated by a broad blue emission due to an allowed d-f transition at 420 nm with an ultraviolet excitation at 290 nm. BaMgAl10O17:Eu 2+, which showed efficient blue emissions at 450 nm with an ultraviolet excitation at 254 nm, was successfully prepared by heating a mixture of Al2O3 and Eu-doped BaMgF4 at 1300°C without any special reducing treatment.
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U2 - 10.1149/1.1785794
DO - 10.1149/1.1785794
M3 - Article
AN - SCOPUS:8644270551
SN - 0013-4651
VL - 151
SP - H217-H220
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 10
ER -