Phosphorus-doped ZnO films were grown by radical source molecular beam epitaxy (RS-MBE). Zn3P2 was used for the phosphorus source. ZnO:P layers were grown on an in situ annealed low temperature buffer layers, and the phosphorus concentration was changed by altering the temperature of the Zn3P2 K-cell. The phosphorus concentration could be controlled from 1×1018 to 2×1020 cm -3 without phase separation. The importance of the ambient gas used during thermal treatments was demonstrated. All of the ZnO:P layers showed n-type conduction, however, the electron concentration of ZnO:P was found to decrease by as much as from 4.1×1019 to 9.7×10 16 cm-3 when the samples underwent oxygen ambient rapid thermal annealing (RTA) treatment. Furthermore, a new photoluminescence peak at 3.357 eV was observed after RTA treatment, which was not present in undoped ZnO layers before and after RTA treatment. These results indicate that the activation of acceptors in ZnO:P occurred in samples that underwent RTA treatment and that phosphorus is a good candidate as an acceptor dopant.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||Published - 2005 5月 1|
|イベント||13th International Conference on Molecular Beam Epitaxy - |
継続期間: 2004 8月 22 → 2004 8月 27
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