TY - GEN
T1 - The first principle computer simulation and real device characteristics of superlattice phase-change memory
AU - Tominaga, J.
AU - Simpson, R.
AU - Fons, P.
AU - Kolobov, A.
PY - 2010/12/1
Y1 - 2010/12/1
N2 - This paper presents of atomically controlled Ge-Sb-Te films that enable a suppression of switching energy, and an increase in speed faster than that using the composite films in Set and Reset. The first principle computer simulations using NVT ensemble dynamics and real device fabrication based on the model were carried out. We found that the obtained experimental data are in good agreement with the simulation models, and succeeded in suppressing the Reset energy by less than 10%.
AB - This paper presents of atomically controlled Ge-Sb-Te films that enable a suppression of switching energy, and an increase in speed faster than that using the composite films in Set and Reset. The first principle computer simulations using NVT ensemble dynamics and real device fabrication based on the model were carried out. We found that the obtained experimental data are in good agreement with the simulation models, and succeeded in suppressing the Reset energy by less than 10%.
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U2 - 10.1109/IEDM.2010.5703412
DO - 10.1109/IEDM.2010.5703412
M3 - Conference contribution
AN - SCOPUS:79951836282
SN - 9781424474196
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 22.3.1-22.3.4
BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010
T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010
Y2 - 6 December 2010 through 8 December 2010
ER -