抄録
GeTe is a narrow band gap semiconductor that undergoes a ferroelectric-to-paraelectric phase transition at ∼705 K. While earlier studies of average structure using Bragg diffraction concluded that the transition was displacive, structural probing of short and intermediate order shows evidence for an order-disorder transition. Here, we report and contrast the structure on different length scales with temperature using a radial distribution function analysis obtained from x-ray based total scattering and show that the order-disorder model is consistent with experiment.
本文言語 | English |
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論文番号 | 231907 |
ジャーナル | Applied Physics Letters |
巻 | 99 |
号 | 23 |
DOI | |
出版ステータス | Published - 2011 12月 5 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)