The Radical Transport in the Narrow-Gap-Reactive-Ion Etcher in SF6 by the Relaxation Continuum Model

Nobuhiko Nakano, Zoran Lj Petrović, Toshiaki Makabe

研究成果: Article査読

27 被引用数 (Scopus)

抄録

We have established a selfconsistent modeling of a narrow-gap reactive ion etcher (N-gap-RIE) with parallel-plate geometry in SF6. Using the discharge structure of the relaxation continuum model, we have numerically predicted the radical transport to the surface of N-gap-RIE in SF6 under two different surface reactions. The spatiotemporal profiles of radicals and neutrals are demonstrated for a long time scale (0–1 s) at between 0.05 Torr and 1.0 Torr at 13.56 MHz. The estimated etch rate of Si wafer with F radicals agrees reasonably well with the previous experimental value obtained under a low-power condition. It is stressed from the present result that the ion-molecule reactions for the generation of F radicals as well as the electron impact dissociation of SF6 are of great importance.

本文言語English
ページ(範囲)2223
ページ数1
ジャーナルJapanese journal of applied physics
33
4S
DOI
出版ステータスPublished - 1994 4月
外部発表はい

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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