The role of vacancies in the pressure amorphisation phenomenon observed in Ge-Sb-Te phase change alloys

M. Krbal, A. V. Kolobov, P. Fons, J. Tominaga, J. Haines, A. Pradel, M. Ribes, C. Levelut, R. Le Parc, M. Hanfland

研究成果: Conference contribution

抄録

We demonstrate, both experimentally and by computer simulation, that while the metastable face-centered cubic (fcc) phase of Ge-Sb-Te becomes amorphous under hydrostatic compression at about 15 GPa, the stable trigonal phase remains crystalline. We present evidences that the pressure-induced amorphisation phenomenon strongly depends on the concentration of vacancies included in the Ge/Sb sublattice, but is thermally insensitive. Upon higher compression, a body-centered cubic phase is obtained in both cases at around 30 GPa. Upon decompression, the amorphous phase is retained when starting with the fcc phase while the initial structure is recovered when starting with the trigonal phase. We argue that the presence of vacancies and the associated subsequent large atomic displacements lead to nanoscale phase separation and the loss of the initial structure memory in the fcc staring phase of Ge-Sb-Te. We futher compare the amorphous phase obtained via the pressure route with the melt quenched amorphous phase.

本文言語English
ホスト出版物のタイトルPhase-Change Materials for Memory and Reconfigurable Electronics Applications
出版社Materials Research Society
ページ80-86
ページ数7
ISBN(印刷版)9781617822186
DOI
出版ステータスPublished - 2010
外部発表はい

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1251
ISSN(印刷版)0272-9172

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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