Recently, we have proposed quantum cross structure (QCS) devices that consist of two metal thin films deposited on organic films with edge-to-edge configuration like crossed fins for switching devices. In this paper, we propose a spin quantum cross structure (SQCS) device, which is a QCS device consisting of two magnetic thin films. We show theoretical and experimental results of electronic transport characteristics regarding SQCS devices. The calculation of the I-V characteristics has been performed for the SQCS devices with the Ni magnetic thin films for both the electrodes within the framework of the Anderson model. Then, we fabricated a SQCS device with the Ni magnetic thin films and measured the I-V characteristics by a four-terminal method. Also, the calculation of the magnetoresistance ratio has been done as a function of renormalized transfer matrices including magnetostriction effects and the other effects phenomenologically.
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