Theoretical and experimental results of electronic transport of spin quantum cross structure devices

Recently, we have proposed quantum cross structure (QCS) devices that consist of two metal thin films deposited on organic films with edge-to-edge configuration like crossed fins for switching devices. In this paper, we propose a spin quantum cross structure (SQCS) device, which is a QCS device consisting of two magnetic thin films. We show theoretical and experimental results of electronic transport characteristics regarding SQCS devices. The calculation of the I-V characteristics has been performed for the SQCS devices with the Ni magnetic thin films for both the electrodes within the framework of the Anderson model. Then, we fabricated a SQCS device with the Ni magnetic thin films and measured the I-V characteristics by a four-terminal method. Also, the calculation of the magnetoresistance ratio has been done as a function of renormalized transfer matrices including magnetostriction effects and the other effects phenomenologically.