TY - JOUR
T1 - Thermal conductivity measurements of low-k films using thermoreflectance phenomenon
AU - Kuwahara, M.
AU - Suzuki, O.
AU - Takada, S.
AU - Hata, N.
AU - Fons, P.
AU - Tominaga, J.
PY - 2008/5/1
Y1 - 2008/5/1
N2 - The thermal conductivity of low-dielectric-constant (low-k) materials has been studied by a nano second thermoreflectance measurement system (Nano-TheMS). The Nano-TheMS, which utilizes thermoreflectance, can easily measure the thermal conductivity of thin film of nano-meter scale thickness. We have measured a series of low-k film samples with varying methyl group content. The methyl group content is a significant factor in determining the dielectric constant and mechanical strength of low-k materials. We have also measured the temperature dependence of the thermal conductivity from room temperature to 300 °C as this dependence is essential to simulate realistic temperature distributions inside integrated devices. It was found that its dependence is not remarkable but the thermal conductivity gradually increase with rising temperature.
AB - The thermal conductivity of low-dielectric-constant (low-k) materials has been studied by a nano second thermoreflectance measurement system (Nano-TheMS). The Nano-TheMS, which utilizes thermoreflectance, can easily measure the thermal conductivity of thin film of nano-meter scale thickness. We have measured a series of low-k film samples with varying methyl group content. The methyl group content is a significant factor in determining the dielectric constant and mechanical strength of low-k materials. We have also measured the temperature dependence of the thermal conductivity from room temperature to 300 °C as this dependence is essential to simulate realistic temperature distributions inside integrated devices. It was found that its dependence is not remarkable but the thermal conductivity gradually increase with rising temperature.
KW - Low-k
KW - Methyl group
KW - Porous silica
KW - Temperature dependence
KW - Thermal conductivity
KW - Thermoreflectance
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U2 - 10.1016/j.mee.2007.12.053
DO - 10.1016/j.mee.2007.12.053
M3 - Article
AN - SCOPUS:44149121974
SN - 0167-9317
VL - 85
SP - 796
EP - 799
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 5-6
ER -