Thermal conductivity of low-k films of varying porosity and direct measurements on silicon substrate

M. Kuwahara, O. Suzuki, S. Takada, N. Hata, P. Fons, J. Tominaga

研究成果: Article査読

5 被引用数 (Scopus)


We have studied the thermal conductivity of a variety of low-dielectric constant (low-k) materials with differing porosities by a nanosecond thermoreflectance measurement system (Nano-TheMS). The Nano-TheMS utilizes thermoreflectance to probe the thermal conductivity of nanometer-order thin films. The porosity of low-k materials is one of most significant factors in determining the dielectric constant and mechanical strength of low-k films. The temperature dependence of the thermal conductivity was measured for four low-k films with differing porosities for temperatures up to 300 °C. The thermal conductivity was found to decrease with increasing porosity and the temperature dependence was slight. The Nano-TheMS has been upgraded to allow for direct measurement of low-k film grown on silicon substrate by switching from a front-detection-rear-heating (FR) to a front-detection-front-heating (FF) pump/probe arrangement. The values of the thermal conductivity for low-k films measured by FF-type Nano-TheMS were consistent with those measured by a FR-type Nano-TheMS arrangement. The new FF arrangement allows for the direct inspection of the thermal conductivity of low-k films without modification of silicon processing procedures.

ジャーナルMicroelectronic Engineering
出版ステータスPublished - 2009 4月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学


「Thermal conductivity of low-k films of varying porosity and direct measurements on silicon substrate」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。