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Topological transition in Bi 1-xSb x studied as a function of Sb doping

  • Fumitaka Nakamura
  • , Yuka Kousa
  • , Alexey A. Taskin
  • , Yasuo Takeichi
  • , Akinori Nishide
  • , Akito Kakizaki
  • , Marie D'Angelo
  • , Patrick Lefevre
  • , Francois Bertran
  • , Amina Taleb-Ibrahimi
  • , Fumio Komori
  • , Shin Ichi Kimura
  • , Hiroshi Kondo
  • , Yoichi Ando
  • , Iwao Matsuda

研究成果: Article査読

抄録

Spin- and angle-resolved photoemission spectroscopy measurements were performed on Bi 1-xSb x samples at x=0.04, 0.07, and 0.21 to study the change of the surface band structure from nontopological to topological. Energy shift of the T and L s bulk bands with Sb concentration is quantitatively evaluated. An edge state becomes topologically nontrivial at x=0.04. An additional trivial edge state appears at the L band gap that forms at x0.04 and apparently hybridize with the nontrivial edge state. A scenario for the topological transition mechanism is presented. Related issues of self-energy and temperature dependence of the surface state are also considered.

本文言語English
論文番号235308
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
84
23
DOI
出版ステータスPublished - 2011 12月 6

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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