TY - JOUR
T1 - Transparent and luminescent thin films of partially substituted La10 (Si O4) 6 O3
T2 - Eu3+ apatite-type silicates
AU - Otsuka, Yuichi
AU - Fujihara, Shinobu
PY - 2007
Y1 - 2007
N2 - Partially substituted oxyapatite silicates, La8 M2 (Si O4) 6 O3: Eu3+ (M=Na, K, Mg, Ca, Sr, Y, and Gd), were prepared as powders and thin films by the conventional solid-state reaction and the sol-gel method, respectively. X-ray diffractometry and Fourier transform infrared spectroscopy were used to evaluate crystallinity and structure of the silicates. Transparent thin-film samples fabricated on quartz glass substrates exhibited intense red emissions due to Eu3+ upon irradiation with UV light through the charge-transfer excitation from O2- to Eu3+. The excitation wavelength, which was 268 nm for the nonsubstituted silicate, was shifted by the substitution in the host silicates. This shift was explained by the change in the lattice constant c and accordingly, the Eu-O distance. Our results then demonstrate that fine tuning of the excitation was possible in the chemically stable and transparent oxyapatite thin films.
AB - Partially substituted oxyapatite silicates, La8 M2 (Si O4) 6 O3: Eu3+ (M=Na, K, Mg, Ca, Sr, Y, and Gd), were prepared as powders and thin films by the conventional solid-state reaction and the sol-gel method, respectively. X-ray diffractometry and Fourier transform infrared spectroscopy were used to evaluate crystallinity and structure of the silicates. Transparent thin-film samples fabricated on quartz glass substrates exhibited intense red emissions due to Eu3+ upon irradiation with UV light through the charge-transfer excitation from O2- to Eu3+. The excitation wavelength, which was 268 nm for the nonsubstituted silicate, was shifted by the substitution in the host silicates. This shift was explained by the change in the lattice constant c and accordingly, the Eu-O distance. Our results then demonstrate that fine tuning of the excitation was possible in the chemically stable and transparent oxyapatite thin films.
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U2 - 10.1149/1.2768303
DO - 10.1149/1.2768303
M3 - Article
AN - SCOPUS:34548239777
SN - 0013-4651
VL - 154
SP - J335-J340
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 10
ER -