抄録
The authors report on the photoluminescence spectroscopy of a single GaSbGaAs type II quantum dot (QD) at 8 K. A sharp exciton emission with a linewidth of less than 250 μeV was observed. Two-exciton emission at the higher energy side of the exciton emission indicates that the two excitons in a type II QD do not form a bound biexciton. The energies of the exciton and two-exciton states were calculated using an atomic pseudopotential model, which provides a quantitative description of the antibound nature of the two-exciton state in type II QDs.
本文言語 | English |
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論文番号 | 013101 |
ジャーナル | Applied Physics Letters |
巻 | 90 |
号 | 1 |
DOI | |
出版ステータス | Published - 2007 |
ASJC Scopus subject areas
- 物理学および天文学(その他)