Ultraviolet-laser atom-probe tomographic three-dimensional atom-by-atom mapping of isotopically modulated Si nanoscopic layers

Oussama Moutanabbir, Dieter Isheim, David N. Seidman, Yoko Kawamura, Kohei M. Itoh

研究成果: Article査読

37 被引用数 (Scopus)

抄録

Using ultraviolet-laser assisted local-electrode atom-probe (UV-LEAP) tomography, we obtain three-dimensional (3D) atom-by-atom images of isotopically modulated S28 i and S 30 i ultrathin layers having thicknesses in the range of 5-30 nm. The 3D images display interfaces between the different monoisotopic layers with an interfacial width of ∼1.7 nm, thus demonstrating a significant improvement over isotope mapping achievable using secondary-ion mass-spectrometry or even visible laser-assisted atom-probe tomography. This sharpness is attributed to reduced thermal effects resulting from using a highly focused UV laser beam. Our findings demonstrate that UV-LEAP tomography provides the high accuracy needed to characterize, at the subnanometer scale, the emerging isotopically programmed nanomaterials.

本文言語English
論文番号013111
ジャーナルApplied Physics Letters
98
1
DOI
出版ステータスPublished - 2011 1月 3

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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