Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement

Masumi Saitoh; Yukio Nakabayashi; Kensuke Ota; Ken Uchida; Toshinori Numata

doi:10.1109/IEDM.2010.5703475

Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement

Masumi Saitoh, Yukio Nakabayashi, Kensuke Ota, Ken Uchida, Toshinori Numata

研究成果: Conference contribution

13 被引用数 (Scopus)

抄録

We systematically studied short-channel mobility (μ) in SOI nanowire transistors (NW Tr.). The strain induced in the NW channel dominates short-L μ. μ of short-L 〈110〉 NW nFETs largely increases due to vertical compressive strain. We achieved further strain enhancement in NW channel by stress memorization technique (SMT). μ increase by SMT is much larger in NW Tr. than in planar Tr. In 〈110〉 NW nFETs, I_on on the same DIBL increases by as much as 58% by SMT thanks to significant R_SD reduction in addition to μ increase, while I_on degradation of pFETs is minimal.

本文言語	English
ホスト出版物のタイトル	2010 IEEE International Electron Devices Meeting, IEDM 2010
ページ	34.3.1-34.3.4
DOI	https://doi.org/10.1109/IEDM.2010.5703475
出版ステータス	Published - 2010
外部発表	はい
イベント	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States 継続期間: 2010 12月 6 → 2010 12月 8

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（印刷版）	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
国/地域	United States
City	San Francisco, CA
Period	10/12/6 → 10/12/8

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.2010.5703475

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引用スタイル

Saitoh, M., Nakabayashi, Y., Ota, K., Uchida, K., & Numata, T. (2010). Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 34.3.1-34.3.4). 記事 5703475 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703475

Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement. / Saitoh, Masumi; Nakabayashi, Yukio; Ota, Kensuke その他.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 34.3.1-34.3.4 5703475 (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: Conference contribution

Saitoh, M, Nakabayashi, Y, Ota, K, Uchida, K & Numata, T 2010, Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703475, Technical Digest - International Electron Devices Meeting, IEDM, pp. 34.3.1-34.3.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703475

Saitoh M, Nakabayashi Y, Ota K, Uchida K, Numata T. Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 34.3.1-34.3.4. 5703475. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2010.5703475

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