TY - GEN
T1 - Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport
AU - Saitoh, Masumi
AU - Yasutake, Nobuaki
AU - Nakabayashi, Yukio
AU - Uchida, Ken
AU - Numata, Toshinori
PY - 2009
Y1 - 2009
N2 - We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.
AB - We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.
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U2 - 10.1109/IEDM.2009.5424318
DO - 10.1109/IEDM.2009.5424318
M3 - Conference contribution
AN - SCOPUS:77952390900
SN - 9781424456406
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 19.5.1-19.5.4
BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
T2 - 2009 International Electron Devices Meeting, IEDM 2009
Y2 - 7 December 2009 through 9 December 2009
ER -