Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors

Takamitsu Ishihara; Ken Uchida; Junji Koga; Shin Ichi Takagi

doi:10.1143/JJAP.45.3125

Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors

Takamitsu Ishihara, Ken Uchida, Junji Koga, Shin Ichi Takagi

研究成果: Article › 査読

17 被引用数 (Scopus)

抄録

A unified model of roughness scattering in single-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors is proposed based on a formulation suitable for perturbation theory. This unified model includes the roughness scattering model both in bulk MOSFETs and in thin SOI MOSFETs. The SOI-thickness-fluctuation-induced scattering component is naturally derived from the proposed roughness scattering model. The experimentally observed dependence of inversion layer mobility on SOI thickness in thin SOI MOSFETs is explained well by the proposed roughness scattering model.

本文言語	English
ページ（範囲）	3125-3132
ページ数	8
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	45
号	4 B
DOI	https://doi.org/10.1143/JJAP.45.3125
出版ステータス	Published - 2006 4月 25
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/JJAP.45.3125

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引用スタイル

Ishihara, T., Uchida, K., Koga, J., & Takagi, S. I. (2006). Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(4 B), 3125-3132. https://doi.org/10.1143/JJAP.45.3125

Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors. / Ishihara, Takamitsu; Uchida, Ken; Koga, Junji その他.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3125-3132.

研究成果: Article › 査読

Ishihara, T, Uchida, K, Koga, J & Takagi, SI 2006, 'Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 45, no. 4 B, pp. 3125-3132. https://doi.org/10.1143/JJAP.45.3125

Ishihara T, Uchida K, Koga J, Takagi SI. Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 4月 25;45(4 B):3125-3132. doi: 10.1143/JJAP.45.3125

Ishihara, Takamitsu ; Uchida, Ken ; Koga, Junji その他. / Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 4 B. pp. 3125-3132.

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