VB-9 Monte Carlo Simulation of a Submicron-Sized GaAs n+-i(n)-n+ Diode

VB-9 Monte Carlo Simulation of a Submicron-Sized GaAs n₊-i(n)-n₊ Diode

Y. Awano, K. Tomizawa, N. Hashizume, M. Kawashima

研究成果: Article › 査読

本文言語	English
ページ（範囲）	1699-1700
ページ数	2
ジャーナル	IEEE Transactions on Electron Devices
巻	29
号	10
DOI	https://doi.org/10.1109/T-ED.1982.20994
出版ステータス	Published - 1982 10月
外部発表	はい

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