抄録
Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.
本文言語 | English |
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ページ(範囲) | 269-273 |
ページ数 | 5 |
ジャーナル | Optical Review |
巻 | 16 |
号 | 3 |
DOI | |
出版ステータス | Published - 2009 5月 |
ASJC Scopus subject areas
- 原子分子物理学および光学