Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti:sapphire laser

Ryota Sawada; Hiroki Tanaka; Naoto Sugiyama; Fumihiko Kannari

doi:10.1364/AO.56.001654

Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti:sapphire laser

Ryota Sawada, Hiroki Tanaka, Naoto Sugiyama, Fumihiko Kannari

電気情報工学科

研究成果: Article › 査読

36 被引用数 (Scopus)

抄録

We experimentally reveal the pump-induced loss in a Ti:sapphire laser crystal with 451-nm indium gallium nitride (InGaN) laser diode pumping and show that 478-nm pumping can reduce such loss. The influence of the pump-induced loss at 451-nm pumping is significant even for a crystal that exhibits higher effective figure-of-merit and excellent laser performance at 520-nm pumping. We demonstrate the power scaling of a Ti:sapphire laser by combining 478- and 520-nm InGaN laser diodes and obtain CW output power of 593 mW.

本文言語	English
ページ（範囲）	1654-1661
ページ数	8
ジャーナル	Applied Optics
巻	56
号	6
DOI	https://doi.org/10.1364/AO.56.001654
出版ステータス	Published - 2017 2月 20

ASJC Scopus subject areas

原子分子物理学および光学
工学（その他）
電子工学および電気工学

文献へのアクセス

10.1364/AO.56.001654

他のファイルとリンク

引用スタイル

@article{31c284dfd67040e1b8c0134a69d5fd4b,

title = "Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti:sapphire laser",

abstract = "We experimentally reveal the pump-induced loss in a Ti:sapphire laser crystal with 451-nm indium gallium nitride (InGaN) laser diode pumping and show that 478-nm pumping can reduce such loss. The influence of the pump-induced loss at 451-nm pumping is significant even for a crystal that exhibits higher effective figure-of-merit and excellent laser performance at 520-nm pumping. We demonstrate the power scaling of a Ti:sapphire laser by combining 478- and 520-nm InGaN laser diodes and obtain CW output power of 593 mW.",

author = "Ryota Sawada and Hiroki Tanaka and Naoto Sugiyama and Fumihiko Kannari",

note = "Funding Information: Ministry of Education, Culture, Sports, Science, and Technology (MEXT) (26286065). The authors thank the NICHIA Co. for providing high-power InGaN blue and green LDs. Publisher Copyright: {\textcopyright} 2017 Optical Society of America.",

year = "2017",

month = feb,

day = "20",

doi = "10.1364/AO.56.001654",

language = "English",

volume = "56",

pages = "1654--1661",

journal = "Applied Optics",

issn = "1559-128X",

publisher = "The Optical Society",

number = "6",

}

TY - JOUR

T1 - Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti:sapphire laser

AU - Sawada, Ryota

AU - Tanaka, Hiroki

AU - Sugiyama, Naoto

AU - Kannari, Fumihiko

N1 - Funding Information: Ministry of Education, Culture, Sports, Science, and Technology (MEXT) (26286065). The authors thank the NICHIA Co. for providing high-power InGaN blue and green LDs. Publisher Copyright: © 2017 Optical Society of America.

PY - 2017/2/20

Y1 - 2017/2/20

N2 - We experimentally reveal the pump-induced loss in a Ti:sapphire laser crystal with 451-nm indium gallium nitride (InGaN) laser diode pumping and show that 478-nm pumping can reduce such loss. The influence of the pump-induced loss at 451-nm pumping is significant even for a crystal that exhibits higher effective figure-of-merit and excellent laser performance at 520-nm pumping. We demonstrate the power scaling of a Ti:sapphire laser by combining 478- and 520-nm InGaN laser diodes and obtain CW output power of 593 mW.

AB - We experimentally reveal the pump-induced loss in a Ti:sapphire laser crystal with 451-nm indium gallium nitride (InGaN) laser diode pumping and show that 478-nm pumping can reduce such loss. The influence of the pump-induced loss at 451-nm pumping is significant even for a crystal that exhibits higher effective figure-of-merit and excellent laser performance at 520-nm pumping. We demonstrate the power scaling of a Ti:sapphire laser by combining 478- and 520-nm InGaN laser diodes and obtain CW output power of 593 mW.

UR - http://www.scopus.com/inward/record.url?scp=85013634232&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85013634232&partnerID=8YFLogxK

U2 - 10.1364/AO.56.001654

DO - 10.1364/AO.56.001654

M3 - Article

C2 - 28234372

AN - SCOPUS:85013634232

SN - 1559-128X

VL - 56

SP - 1654

EP - 1661

JO - Applied Optics

JF - Applied Optics

IS - 6

ER -

Wavelength-multiplexed pumping with 478- and 520-nm indium gallium nitride laser diodes for Ti:sapphire laser

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル