ZnO thin film and nanorod growth by pulsed laser deposition for photonic devices

Tatsunori Sakano, Ryo Nishimura, Hiroki Fukuoka, Yoshihiro Yata, Toshiharu Saiki, Minoru Obara, Hiroyuki Kato, Michihiro Sano

研究成果: Conference contribution


We investigate post-annealing effects using an epi-GaN substrates for ZnO thin film growth by pulsed laser deposition (PLD). The growth of ZnO nanorods on a Si(100) substrate through a two-step process, annealing and off-axis PLD, without a metal catalyst is demonstrated as well. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were measured and the post-annealed ZnO films grown at Tg = 700°C had very smooth surfaces and the rms roughness was about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epi-layer and GaN/sapphire substrates. It was evident by AFM that growth temperature of 700°C helps the films grow in a step-flow growth mode. It was confirmed by cathode luminescence (CL) spectrum that the ZnO film grown at 700°C had very low visible luminescence, resulting in a decrease of the deep level defects. In the case of ZnO nanorods, controlling growth parameters during deposition enabled the adjustment of the dimensions of nanorods. The diameters of the grown nanorods ranged from 50 to 700 nm and the lengths are from 2 to 10 μm. The CL spectra were used to evaluate the states of defects within the ZnO nanorods. According to the CL results, the thinnest nanorod arrays were found to have fewer defects, while more defects were introduced as nanorods became thicker.

ホスト出版物のタイトルHigh-Power Laser Ablation VII
出版ステータスPublished - 2008
イベントHigh-Power Laser Ablation VII - Taos, NM, United States
継続期間: 2008 4月 202008 4月 24


名前Proceedings of SPIE - The International Society for Optical Engineering


OtherHigh-Power Laser Ablation VII
国/地域United States
CityTaos, NM

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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