TY - JOUR
T1 - ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications
AU - Matsubara, K.
AU - Fons, P.
AU - Iwata, K.
AU - Yamada, A.
AU - Sakurai, K.
AU - Tampo, H.
AU - Niki, S.
PY - 2003/5/1
Y1 - 2003/5/1
N2 - Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Corning 7059 glass substrate at a substrate temperature of 200 °C. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 × 10-4 Ωcm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 × 10-4 Ωcm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se2 thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window.
AB - Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Corning 7059 glass substrate at a substrate temperature of 200 °C. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 × 10-4 Ωcm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 × 10-4 Ωcm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se2 thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window.
KW - Pulsed laser deposition
KW - Solar cells
KW - Transparent conducting oxide
KW - Zinc oxide
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U2 - 10.1016/S0040-6090(03)00243-8
DO - 10.1016/S0040-6090(03)00243-8
M3 - Conference article
AN - SCOPUS:17144469759
SN - 0040-6090
VL - 431-432
SP - 369
EP - 372
JO - Thin Solid Films
JF - Thin Solid Films
T2 - Proceedings of Symposium B
Y2 - 18 June 2002 through 21 June 2002
ER -