ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications

K. Matsubara, P. Fons, K. Iwata, A. Yamada, K. Sakurai, H. Tampo, S. Niki

研究成果: Conference article査読

260 被引用数 (Scopus)

抄録

Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Corning 7059 glass substrate at a substrate temperature of 200 °C. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 × 10-4 Ωcm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 × 10-4 Ωcm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se2 thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window.

本文言語English
ページ(範囲)369-372
ページ数4
ジャーナルThin Solid Films
431-432
DOI
出版ステータスPublished - 2003 5月 1
外部発表はい
イベントProceedings of Symposium B - Strasbourg, France
継続期間: 2002 6月 182002 6月 21

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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