Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Corning 7059 glass substrate at a substrate temperature of 200 °C. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 × 10-4 Ωcm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 × 10-4 Ωcm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se2 thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window.
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